PHE13005,127
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.56000
10+
$0.47600
100+
$0.35520
500+
$0.27904
1,000+
$0.21563
Exquisite packaging
Discount
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The PHE13005,127 from WeEn Semiconductors is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the PHE13005,127 is a reliable choice for both commercial and industrial use. Trust WeEn Semiconductors to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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