PHE13007,127
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 8A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.66000
10+
$0.57800
100+
$0.44310
500+
$0.35028
1,000+
$0.28022
Exquisite packaging
Discount
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The PHE13007,127 by WeEn Semiconductors is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the PHE13007,127 ensures efficient and stable operation. Backed by WeEn Semiconductors's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 1A, 5A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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