PJMB130N65EC_R2_00601
Panjit International Inc.
Panjit International Inc.
650V/ 130MOHM / 29A/ EASY TO DRI
$4.53
Available to order
Reference Price (USD)
1+
$4.53000
500+
$4.4847
1000+
$4.4394
1500+
$4.3941
2000+
$4.3488
2500+
$4.3035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJMB130N65EC_R2_00601 single MOSFET from Panjit International Inc. is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the PJMB130N65EC_R2_00601 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 235W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDMC4435BZ-F127-L701
onsemi
NTBL082N65S3HF
Micro Commercial Co
SI3420-TP
onsemi
NVMYS013N08LHTWG
Harris Corporation
IRF9543
IXYS
MCB60I1200TZ-TUB
Infineon Technologies
IRL60SC216ARMA1
onsemi
NTMFS08N004C
SemiQ
GCMS080B120S1-E1
Fairchild Semiconductor