PJP60R620E_T0_00001
Panjit International Inc.
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the PJP60R620E_T0_00001 single MOSFET from Panjit International Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PJP60R620E_T0_00001 combines cutting-edge technology with Panjit International Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRF640STRLPBF
Vishay Siliconix
SQM50P03-07_GE3
Rohm Semiconductor
RE1C001UNTCL
Diodes Incorporated
DMG2301LK-13
onsemi
NTMFS4C09NT3G
Rohm Semiconductor
RAL025P01TCR
Nexperia USA Inc.
BUK9Y12-55B,115
Alpha & Omega Semiconductor Inc.
AOWF15S65
IXYS
IXTA08N120P
Fairchild Semiconductor