PJQ2409_R1_00001
Panjit International Inc.
Panjit International Inc.
DFN2020B-6L, MOSFET
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ2409_R1_00001 from Panjit International Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Panjit International Inc.'s PJQ2409_R1_00001 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020B-6
- Package / Case: 6-WDFN Exposed Pad
Related Products
Vishay Siliconix
IRFL9014TRPBF-BE3
IXYS
IXTH10P60
Panjit International Inc.
PJC7412_R1_00001
Infineon Technologies
IRF1010NPBF
Diodes Incorporated
DMTH4007SK3-13
IXYS
IXTA160N10T
NXP USA Inc.
PMV22EN,215
Infineon Technologies
IPB054N08N3GATMA1
STMicroelectronics
STW9N150
Renesas Electronics America Inc