PJQ5442_R2_00001
Panjit International Inc.
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PJQ5442_R2_00001 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJQ5442_R2_00001 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
Related Products
Toshiba Semiconductor and Storage
TK2Q60D(Q)
IXYS Integrated Circuits Division
CPC3708CTR
STMicroelectronics
STD12N50DM2
Renesas Electronics America Inc
NP16N06YLL-E1-AY
Vishay Siliconix
IRFR014PBF
onsemi
FDMC7696
STMicroelectronics
STB17N80K5
STMicroelectronics
STB55NF06LT4
Fairchild Semiconductor
FQP9N08
Taiwan Semiconductor Corporation