PJQ5444_R2_00001
Panjit International Inc.
         
                
                                Panjit International Inc.                            
                        
                                40V N-CHANNEL ENHANCEMENT MODE M                            
                        $0.72
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.72000
                                        500+
                                            $0.7128
                                        1000+
                                            $0.7056
                                        1500+
                                            $0.6984
                                        2000+
                                            $0.6912
                                        2500+
                                            $0.684
                                        Exquisite packaging
                            Discount
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                    The PJQ5444_R2_00001 by Panjit International Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PJQ5444_R2_00001 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    