PJS6602_S2_00001
Panjit International Inc.
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
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Upgrade your electronic designs with the PJS6602_S2_00001 by Panjit International Inc., a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the PJS6602_S2_00001 ensures energy efficiency and robust performance. Panjit International Inc.'s commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 3.4A (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 10V, 522pF @ 10V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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