PJW1NA60_R2_00001
Panjit International Inc.
Panjit International Inc.
600V N-CHANNEL MOSFET
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PJW1NA60_R2_00001 by Panjit International Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PJW1NA60_R2_00001 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
Related Products
Alpha & Omega Semiconductor Inc.
AOTF10T60_001
Toshiba Semiconductor and Storage
TPCA8012-H(TE12LQM
Renesas Electronics America Inc
2SK3386-Z-AZ
Alpha & Omega Semiconductor Inc.
AO3496
Central Semiconductor Corp
CTLM7110-M832D BK
Renesas Electronics America Inc
RJK0366DPA-WS#J0
Infineon Technologies
BST113A
Renesas Electronics America Inc
RJK03M5DNS-WS#J5
Infineon Technologies
IPS075N03LGBKMA1
onsemi