PJW5N10-AU_R2_000A1
Panjit International Inc.
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJW5N10-AU_R2_000A1 by Panjit International Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Panjit International Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
AUIRFZ24NS
NXP USA Inc.
ON5441518
Infineon Technologies
IPD15N06S2L64ATMA2
Diodes Incorporated
DMP3026SFDF-13
Vishay Siliconix
SIHP22N65E-GE3
onsemi
NVMFS5C628NLWFAFT3G
NXP USA Inc.
BUK7E4R3-75C,127
STMicroelectronics
STD30NF06T4
STMicroelectronics
STD40NF10
STMicroelectronics