PLZ6V8B-G3/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.66V 960MW DO219AC
$0.30
Available to order
Reference Price (USD)
4,500+
$0.05313
9,000+
$0.04683
13,500+
$0.04053
31,500+
$0.03843
112,500+
$0.03213
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the PLZ6V8B-G3/H Zener diode from Vishay General Semiconductor - Diodes Division is a critical component in the Discrete Semiconductor Products category. This single Zener diode is designed to deliver unmatched voltage regulation, with features such as high surge current capability and low dynamic impedance. It is particularly suited for applications in automotive electronics, where it protects ECUs and sensors from voltage surges. The PLZ6V8B-G3/H is also widely used in industrial automation, providing stable voltage references for PLCs and motor drives. Its versatility extends to consumer electronics, where it ensures the longevity of devices like smartphones and laptops by preventing voltage overloads.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.66 V
- Tolerance: ±2.55%
- Power - Max: 960 mW
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-219AC
- Supplier Device Package: DO-219AC (microSMF)
Related Products
Microchip Technology
JANTX1N4626C-1/TR
onsemi
SZMM5Z3V6T1G
Vishay General Semiconductor - Diodes Division
MMSZ4688-E3-18
Vishay General Semiconductor - Diodes Division
MMSZ5265C-G3-08
Vishay General Semiconductor - Diodes Division
PLZ33D-HG3_A/H
Taiwan Semiconductor Corporation
BZS55C36 RXG
Microchip Technology
JANTXV1N4119C-1
Renesas Electronics America Inc
RD8.2F
Microchip Technology
SMAJ5940CE3/TR13
onsemi