PMBT3904RAZ
Nexperia USA Inc.
Nexperia USA Inc.
PMBT3904RA/SOT1268/DFN1412-6
$0.07
Available to order
Reference Price (USD)
1+
$0.07207
500+
$0.0713493
1000+
$0.0706286
1500+
$0.0699079
2000+
$0.0691872
2500+
$0.0684665
Exquisite packaging
Discount
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Meet the PMBT3904RAZ Nexperia USA Inc. s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the PMBT3904RAZ demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 480mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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