PMBT4403YS115
NXP USA Inc.
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMBT4403YS115 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the PMBT4403YS115 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of PMBT4403YS115 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Central Semiconductor Corp
2N3253 TIN/LEAD
Infineon Technologies
BCV26E327
Panasonic Electronic Components
2SD2018
Microchip Technology
JAN2N696
Fairchild Semiconductor
BC547TF
onsemi
FJAF6815TU
Fairchild Semiconductor
NZT6729
Panasonic Electronic Components
2SD1994ARA
onsemi
BC546BU
Infineon Technologies