PMDPB58UPE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2P-CH 20V 3.6A HUSON6
$0.46
Available to order
Reference Price (USD)
3,000+
$0.19550
6,000+
$0.18450
15,000+
$0.17350
30,000+
$0.16580
Exquisite packaging
Discount
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Upgrade your electronic designs with the PMDPB58UPE,115 by Nexperia USA Inc., a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the PMDPB58UPE,115 ensures energy efficiency and robust performance. Nexperia USA Inc.'s commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
- Power - Max: 515mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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