PMGD780SN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.49A 6TSSOP
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08360
6,000+
$0.07524
15,000+
$0.06688
30,000+
$0.06270
75,000+
$0.05559
150,000+
$0.05350
Exquisite packaging
Discount
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The PMGD780SN,115 from Nexperia USA Inc. is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the PMGD780SN,115 provides reliable performance in demanding environments. Choose Nexperia USA Inc. for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 490mA
- Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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