PMGD8000LN,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 0.125A 6TSSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the PMGD8000LN,115 from NXP USA Inc., a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the PMGD8000LN,115 provides the reliability and efficiency you need. NXP USA Inc.'s cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 125mA
- Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Vishay Siliconix
SI5903DC-T1-GE3
Diodes Incorporated
DMC62D0SVQ-7
Diodes Incorporated
DMN5L06VK-13
Vishay Siliconix
SI5906DU-T1-GE3
Vishay Siliconix
SI6562DQ-T1-GE3
Infineon Technologies
BSO207PHXUMA1
Diodes Incorporated
DMP2066LSD-13
Infineon Technologies
IRFHE4250DTRPBF
Vishay Siliconix
SI3905DV-T1-E3
Diodes Incorporated