PMN28UN,165
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 12V 5.7A 6TSOP
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Enhance your electronic projects with the PMN28UN,165 single MOSFET from NXP USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust NXP USA Inc.'s PMN28UN,165 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-74
- Package / Case: SC-74, SOT-457
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