PMN42XPEAH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 5.7A 6TSOP
$0.43
Available to order
Reference Price (USD)
3,000+
$0.13794
6,000+
$0.12958
15,000+
$0.12122
30,000+
$0.11119
75,000+
$0.10701
Exquisite packaging
Discount
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Discover the PMN42XPEAH from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMN42XPEAH ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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