PMPB08R4VPX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 12V 12A DFN2020M-6
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMPB08R4VPX from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMPB08R4VPX offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
IPP60R105CFD7XKSA1
Rohm Semiconductor
RCX450N20
Fairchild Semiconductor
FQPF7N10
Vishay Siliconix
SIR588DP-T1-RE3
Vishay Siliconix
SISS71DN-T1-GE3
Microchip Technology
APT75M50L
Nexperia USA Inc.
BUK7M5R0-40HX
IXYS
IXFA50N20X3
Panjit International Inc.
PJA3440_R1_00001
Micro Commercial Co