PMPB15XP,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 12V 8.2A DFN2020MD-6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.30812
6,000+
$0.28975
15,000+
$0.28056
30,000+
$0.27555
Exquisite packaging
Discount
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Upgrade your designs with the PMPB15XP,115 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMPB15XP,115 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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