PMPB23XNE,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 7A DFN2020MD-6
$0.09
Available to order
Reference Price (USD)
3,000+
$0.18084
Exquisite packaging
Discount
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Enhance your electronic projects with the PMPB23XNE,115 single MOSFET from NXP USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust NXP USA Inc.'s PMPB23XNE,115 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010B-6
- Package / Case: 6-XFDFN Exposed Pad
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