PMR400UN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 800MA SC75
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMR400UN,115 by NXP USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PMR400UN,115 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 530mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75
- Package / Case: SC-75, SOT-416
Related Products
Toshiba Semiconductor and Storage
TK60E08K3,S1X(S
Infineon Technologies
IRF9Z34NSPBF
Infineon Technologies
IRFR3708TRRPBF
STMicroelectronics
STP8NM60FP
Fairchild Semiconductor
FQB10N20CTM
Infineon Technologies
IRFR9120NPBF
Infineon Technologies
AUIRL1404STRL
NXP USA Inc.
BUK9635-55,118
Infineon Technologies
IRFR3518PBF
Rohm Semiconductor