PMV20XNER
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 5.7A TO236AB
$0.43
Available to order
Reference Price (USD)
3,000+
$0.12733
6,000+
$0.12105
15,000+
$0.11163
30,000+
$0.10535
75,000+
$0.09593
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV20XNER by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PMV20XNER is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
RS1E180BNTB
Infineon Technologies
IPP80N06S407AKSA2
Renesas Electronics America Inc
RJK1003DPN-A0#T2
Infineon Technologies
IRFZ44ZPBF
IXYS
IXTP2N65X2
Nexperia USA Inc.
BSS84AKVL
STMicroelectronics
STP5NK80Z
Nexperia USA Inc.
BUK7Y25-80EX
Rohm Semiconductor
R6006JNJGTL
Vishay Siliconix