PMWD15UN,518
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 20V 11.6A 8TSSOP
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The PMWD15UN,518 from NXP USA Inc. is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the PMWD15UN,518 provides reliable performance in demanding environments. Choose NXP USA Inc. for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11.6A
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
- Power - Max: 4.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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