PMWD19UN,518
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 5.6A 8TSSOP
$0.00
Available to order
Reference Price (USD)
5,000+
$0.33600
Exquisite packaging
Discount
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Discover the high-performance PMWD19UN,518 from NXP USA Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the PMWD19UN,518 delivers unmatched performance. Trust NXP USA Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.6A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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