PMWD26UN,518
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 20V 7.8A 8TSSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMWD26UN,518 by NXP USA Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PMWD26UN,518 provides reliable operation under stringent conditions. NXP USA Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.8A
- Rds On (Max) @ Id, Vgs: 30mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
Related Products
Comchip Technology
CMS25NN03V8-HF
onsemi
FD6M016N03
Alpha & Omega Semiconductor Inc.
AO7600
Vishay Siliconix
SI1913DH-T1-E3
Fairchild Semiconductor
FDS8949-F085
Vishay Siliconix
SI3948DV-T1-GE3
Diodes Incorporated
DMN5L06V-7
Infineon Technologies
AUIRF7343Q
Infineon Technologies
IRFI4212H-117P
onsemi