PMXB75UPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.9A DFN1010D-3
$0.43
Available to order
Reference Price (USD)
5,000+
$0.09858
10,000+
$0.09091
25,000+
$0.08579
50,000+
$0.07812
125,000+
$0.07673
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PMXB75UPEZ by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMXB75UPEZ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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