PMZB290UNE2YL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.2A DFN1006B-3
$0.37
Available to order
Reference Price (USD)
10,000+
$0.06834
30,000+
$0.06460
50,000+
$0.05824
100,000+
$0.05712
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMZB290UNE2YL from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMZB290UNE2YL offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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