PMZB370UNE,315-NEX
Nexperia USA Inc.
Nexperia USA Inc.
EFFECT TRANSISTOR, 0.9A I(D), 30
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMZB370UNE,315-NEX from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMZB370UNE,315-NEX for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
Related Products
Renesas Electronics America Inc
V-A0395
Renesas Electronics America Inc
2SK1772HYTR-E
Infineon Technologies
IPL70R2K1CESATMA1
Transphorm
TP65H150LSG
NXP USA Inc.
BUK653R5-55C
Microsemi Corporation
APTC60SKM35T1G
STMicroelectronics
STFI10LN80K5
Infineon Technologies
IPD039N08NF2SATMA1
Infineon Technologies
IRFC260NB
NXP Semiconductors