PRMH9Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V DFN1412-6
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05060
10,000+
$0.04301
25,000+
$0.04048
50,000+
$0.03795
125,000+
$0.03289
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PRMH9Z from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the PRMH9Z ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Nexperia USA Inc.'s PRMH9Z delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
Related Products
onsemi
NSBA114TDP6T5G
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Toshiba Semiconductor and Storage
RN2905,LXHF(CT
Toshiba Semiconductor and Storage
RN2703,LF
Diodes Incorporated
DDC123JU-7-F
Nexperia USA Inc.
PEMD12,315
Rohm Semiconductor
EMH11FHAT2R
Nexperia USA Inc.
PIMD2,115
NXP USA Inc.
PUMB20,115
Diodes Incorporated