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PSMN016-100YS,115

Nexperia USA Inc.
PSMN016-100YS,115 Preview
Nexperia USA Inc.
MOSFET N-CH 100V 51A LFPAK56
$1.66
Available to order
Reference Price (USD)
1,500+
$0.41299
3,000+
$0.38546
7,500+
$0.36619
10,500+
$0.35242
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 16.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 117W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669

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