PSMN018-100PSFQ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 53A TO220AB
$0.00
Available to order
Reference Price (USD)
5,000+
$0.54819
Exquisite packaging
Discount
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Meet the PSMN018-100PSFQ by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN018-100PSFQ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 111W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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