PSMN2R6-60PSQ127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 150A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PSMN2R6-60PSQ127 single MOSFET from NXP USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust NXP USA Inc.'s PSMN2R6-60PSQ127 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 326W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STD3NM60T4
Infineon Technologies
IRL530NL
Vishay Siliconix
IRFR9110TR
Infineon Technologies
IRL8113
Infineon Technologies
IRLU9343
IXYS
IXTQ220N075T
onsemi
NTD32N06LG
onsemi
FDPF15N65YDTU
Harris Corporation
2N6761
Infineon Technologies