Shopping cart

Subtotal: $0.00

PSMN3R2-25YLC,115

NXP USA Inc.
PSMN3R2-25YLC,115 Preview
NXP USA Inc.
MOSFET N-CH 25V 100A LFPAK56
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 12 V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669

Related Products

Renesas Electronics America Inc

2SK1667-E

Vishay Siliconix

IRF740ALPBF

Alpha & Omega Semiconductor Inc.

AOD409

Vishay Siliconix

SIA447DJ-T1-GE3

Diodes Incorporated

DMN3051LDM-7

Fairchild Semiconductor

FDD6778A

Top