PSMN3R9-60XS127
NXP USA Inc.
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PSMN3R9-60XS127 by NXP USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN3R9-60XS127 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose NXP USA Inc..
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Fairchild Semiconductor
FDC6392S
IXYS
IXTA80N10T7
Vishay Siliconix
SUM90N06-5M5P-E3
Infineon Technologies
IRF7665S2TR1PBF
Infineon Technologies
IRF7853PBF
Infineon Technologies
IPP120N06S4H1AKSA1
onsemi
NTB75N03L09T4
Vishay Siliconix
SIR472DP-T1-GE3
Sanken
DKI10299
Alpha & Omega Semiconductor Inc.