PSMN4R5-40PS,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A TO220AB
$2.10
Available to order
Reference Price (USD)
1+
$1.73000
50+
$1.38020
100+
$1.20760
500+
$0.93652
1,000+
$0.73937
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PSMN4R5-40PS,127 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PSMN4R5-40PS,127 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 148W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
onsemi
SCH2830-TL-E
Diodes Incorporated
ZXMN6A11GTA
Panjit International Inc.
PJE8407_R1_00001
Renesas Electronics America Inc
RJK0236DPA-00#J5A
Renesas Electronics America Inc
UPA2700GR-E1-A
Panjit International Inc.
PJA3401A_R1_00001
Infineon Technologies
BSC360N15NS3GATMA1
Panjit International Inc.
PJL9421_R2_00001
Diodes Incorporated
DMT2004UFV-13
Diodes Incorporated