PSMN7R0-100XS,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 55A TO220F
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN7R0-100XS,127 by NXP USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PSMN7R0-100XS,127 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 57.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Infineon Technologies
IRF7492TR
onsemi
NTMFS4701NT3G
Diodes Incorporated
ZXM64P035L3
IXYS
IXTH150N17T
NXP USA Inc.
PSMN050-80PS,127
IXYS
IXTP88N085T
Infineon Technologies
IPI80N04S3H4AKSA1
NXP USA Inc.
BUK9608-55,118
Toshiba Semiconductor and Storage
TPCC8104,L1Q(CM
STMicroelectronics