PSMN7R6-60XSQ
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 51.5A TO220F
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Optimize your power electronics with the PSMN7R6-60XSQ single MOSFET from NXP USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PSMN7R6-60XSQ combines cutting-edge technology with NXP USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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