PSMN8R0-30YLC,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 54A LFPAK56
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN8R0-30YLC,115 from NXP USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PSMN8R0-30YLC,115 offers the precision and reliability you need. Trust NXP USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 848 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IPW65R095C7
onsemi
NTMFS4833NST1G
Infineon Technologies
IRL5602STRLPBF
STMicroelectronics
STF12NM50ND
Taiwan Semiconductor Corporation
TSM8N50CH C5G
STMicroelectronics
STB14NM65N
STMicroelectronics
STB20NM50-1
Infineon Technologies
AUIRLS3036
onsemi
NTMFS4C55NT3G
Toshiba Semiconductor and Storage