PTAB182002TCV2R250XTMA1
Infineon Technologies
Infineon Technologies
IC RF FET LDMOS 190W H-49248H-4
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As a leading solution in the Discrete Semiconductor Products market, the PTAB182002TCV2R250XTMA1 RF MOSFET from Infineon Technologies (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The PTAB182002TCV2R250XTMA1's advanced design ensures maximum power transfer with minimal distortion. With Infineon Technologies's expertise in semiconductor innovation, the PTAB182002TCV2R250XTMA1 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 520 mA
- Power - Output: 29W
- Voltage - Rated: 65 V
- Package / Case: H-49248H-4
- Supplier Device Package: H-49248H-4
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