PTFA092201E V1
Infineon Technologies
Infineon Technologies
FET RF 65V 960MHZ H-36260-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PTFA092201E V1 from Infineon Technologies is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the PTFA092201E V1 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Infineon Technologies's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.85 A
- Power - Output: 220W
- Voltage - Rated: 65 V
- Package / Case: H-36260-2
- Supplier Device Package: H-36260-2
Related Products
NXP USA Inc.
MRF6S24140HR5
CEL
NE5550279A-T1-A
Ampleon USA Inc.
BLF6G05LS-200RN:11
NXP USA Inc.
MRFE6VP8600HR6
STMicroelectronics
PD54003S-E
NXP USA Inc.
MRF085HR5
NXP USA Inc.
BF994S,215
Infineon Technologies
PTFA091201FV4XWSA1
STMicroelectronics
SD2933
NXP USA Inc.