PTFA092211ELV4XWSA1
Infineon Technologies
Infineon Technologies
FET RF LDMOS 220W H33288-2
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Meet the PTFA092211ELV4XWSA1, a state-of-the-art RF MOSFET transistor from Infineon Technologies, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The PTFA092211ELV4XWSA1 combines cutting-edge semiconductor technology with Infineon Technologies's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the PTFA092211ELV4XWSA1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 940MHz
- Gain: 18dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.75 A
- Power - Output: 220W
- Voltage - Rated: 65 V
- Package / Case: H-33288-2
- Supplier Device Package: H-33288-2
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