PTFA181001EV4R250XTMA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 100W H-36248-2
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Meet the PTFA181001EV4R250XTMA1, a state-of-the-art RF MOSFET transistor from Infineon Technologies, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The PTFA181001EV4R250XTMA1 combines cutting-edge semiconductor technology with Infineon Technologies's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the PTFA181001EV4R250XTMA1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 16.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 1µA
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 100W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36248-2
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