PTFA261702E V1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 170W H-30275-4
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Engineered for excellence, the PTFA261702E V1 RF MOSFET from Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The PTFA261702E V1's robust construction ensures long-term reliability even in harsh environments. Choose Infineon Technologies's PTFA261702E V1 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.66GHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 170W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30275-4
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