PTFB191501EV1XWSA1
Infineon Technologies
Infineon Technologies
FET RF LDMOS 150W H36248-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PTFB191501EV1XWSA1, a state-of-the-art RF MOSFET transistor from Infineon Technologies, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The PTFB191501EV1XWSA1 combines cutting-edge semiconductor technology with Infineon Technologies's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the PTFB191501EV1XWSA1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 18dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 150W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36248-2
Related Products
NXP USA Inc.
BSS83,235
Ampleon USA Inc.
BLF7G24L-140,118
Ampleon USA Inc.
BLF7G27L-75P,112
STMicroelectronics
SD57120
Ampleon USA Inc.
BLF8G20LS-200V,118
Ampleon USA Inc.
BLC9H10XS-300PZ
Infineon Technologies
PTFA210701EV4T500XWSA1
NXP USA Inc.
BF245A,112
NXP USA Inc.
MRF6S21100HSR3
onsemi