PUMD15,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.30
Available to order
Reference Price (USD)
1+
$0.34000
10+
$0.27600
100+
$0.14620
500+
$0.09618
1,000+
$0.06541
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Nexperia USA Inc.'s PUMD15,115, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Nexperia USA Inc.'s dedication to excellence ensures that the PUMD15,115 meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Panasonic Electronic Components
XP0621100L
Toshiba Semiconductor and Storage
RN1906,LF(CT
onsemi
NSBC114YPDXV6T5G
onsemi
NSVMUN5332DW1T1G
onsemi
SMUN5315DW1T1G
onsemi
MUN5312DW1T1G
Toshiba Semiconductor and Storage
RN1911FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4904FE,LF(CT
Panasonic Electronic Components
XN0421L00L
onsemi