PUMZ1,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN/PNP 40V 0.1A 6TSSOP
$0.30
Available to order
Reference Price (USD)
3,000+
$0.05727
6,000+
$0.04980
15,000+
$0.04233
30,000+
$0.03984
75,000+
$0.03735
150,000+
$0.03486
Exquisite packaging
Discount
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The PUMZ1,115 BJT Array from Nexperia USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The PUMZ1,115 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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