PZM5.6NB2,115
NXP USA Inc.
NXP USA Inc.
DIODE ZENER 5.6V 300MW SMT3
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PZM5.6NB2,115 from NXP USA Inc. is a high-performance Zener diode designed for precision voltage regulation in various electronic circuits. As part of the Discrete Semiconductor Products category, this single Zener diode offers exceptional stability and reliability, making it ideal for applications requiring consistent voltage reference. Key features include low impedance, sharp breakdown characteristics, and excellent temperature stability. These diodes are widely used in power supplies, voltage clippers, and surge protectors. For instance, the PZM5.6NB2,115 is commonly employed in automotive electronics, telecommunications equipment, and industrial control systems to ensure stable voltage levels and protect sensitive components from voltage spikes.
Specifications
- Product Status: Obsolete
- Voltage - Zener (Nom) (Vz): 5.6 V
- Tolerance: ±2%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 2.5 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
Related Products
Vishay General Semiconductor - Diodes Division
BZD17C68P-E3-18
Microchip Technology
SMBJ5939BE3/TR13
Microchip Technology
CDLL5299E3/TR
Panjit International Inc.
BZX84C4V3_R1_00001
Taiwan Semiconductor Corporation
BZX585B11 RSG
Microchip Technology
JANS1N4106C-1/TR
Vishay General Semiconductor - Diodes Division
BZX384C8V2-E3-18
Microchip Technology
JANTXV1N4124-1
Microchip Technology
JAN1N4122DUR-1/TR
Comchip Technology