PZTA14H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 30V 0.3A SOT223-4
$0.21
Available to order
Reference Price (USD)
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$0.21000
500+
$0.2079
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$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
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Discover the PZTA14H6327XTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the PZTA14H6327XTSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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