QJD1210010
Powerex Inc.
Powerex Inc.
MOSFET 2N-CH 1200V 100A SIC
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Upgrade your electronic designs with the QJD1210010 by Powerex Inc., a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the QJD1210010 ensures energy efficiency and robust performance. Powerex Inc.'s commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
- Power - Max: 1080W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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